Silicon location through backscattered electron imaging and X-ray microanalysis in leaves of Cyperus ligularis L. and Rhynchospora aberrans C. B. Clarke (Cyperaceae)

Backscattered electron imaging of cultured cells: application to electron probe X-ray microanalysis using a scanning electron microscope.

We report a simple method to study the elemental content in cultured human adherent cells by electron probe X-ray microanalysis with scanning electron microscopy. Cells were adapted to grow on polycarbonate tissue culture cell inserts, washed with distilled water, plunge-frozen with liquid nitrogen and freeze-dried. Unstained, freeze-dried cultured cells were visualized in the secondary and bac...

X-ray microanalysis attachment for electron microscope.

Iodine Vapor Staining for Atomic Number Contrast in Backscattered Electron and X-ray Imaging

Iodine imparts strong contrast to objects imaged with electrons and X-rays due to its high atomic number (53), and is widely used in liquid form as a microscopic stain and clinical contrast agent. We have developed a simple technique which exploits elemental iodine's sublimation-deposition state-change equilibrium to vapor stain specimens with iodine gas. Specimens are enclosed in a gas-tight c...

Characterization of atmospheric particles by electron probe X-ray microanalysis.

Microchemical glass standards were used to validate a quantitation method based on peak-to-background (P/B) ratios from electron probe x-ray microanalysis spectra. This standardless method was applied to the determination of concentrations of individual particles from Malpha or Lalpha lines, as well as from Kalpha lines. The algorithm was tested on particulate glass samples for diameters rangin...

Electron energy loss and diffraction of backscattered electrons from silicon

Electrons backscattered from crystals can show Kikuchi patterns: variations in intensity for different outgoing directions due to diffraction by the lattice. Here, we measure these effects as a function of their energy loss for 30 keV electrons backscattered from silicon. The change in diffraction contrast with energy loss depends strongly on the scattering geometry. At steep incidence on the s...